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TPCS8205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
TPCS8205
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 m (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 20 V) Enhancement mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 A) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20k) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 12 5 20 1.1 W PD(2) 0.5 Unit V V V A
JEDEC JEITA TOSHIBA
2-3R1E
Drain power dissipation (t = 10s) Single-device value (Note 2a) at dual operation (Note 3b) Drain power dissipation (t = 10s) Single-device value (Note 2b) at dual operation (Note 3b) Single pulse avalanche energy (Note 4) Avalanche current Repetitive avalanche energy Single-device value at operation (Note 2a, Note 3b, Note 5) Channel temperature Storage temperature range Single-device operation (Note 3a)
Single-device operation (Note 3a)
Weight: 0.035 g (typ.)
Circuit Configuration
W
PD (1)
0.6
PD (2) EAS IAR EAR Tch Tstg
0.35
32.5 5 0.05 150 -55~150
mJ A mJ C C
Note: (Note 1), (Note 2a), (Note 2b), (Note 3a), (Note 3b), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
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TPCS8205
Thermal Characteristics
Characteristics Single-device operation (Note 3a) Symbol Rth (ch-a) (1) Rth (ch-a) (2) Rth (ch-a) (1) Rth (ch-a) (2) Max 114 Unit
Thermal resistance, channel to ambient (t = 10s) (Note 2a) Single-device value at dual operation (Note 3b)
250 C/W 208
Thermal resistance, channel to ambient (t = 10s) (Note 2b) Single-device value at dual operation (Note 3b)
Single-device operation (Note 3a)
357
Marking (Note 6)
Part No. (or abbreviation code)
S8205
Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: a) Device mounted on a glass-epoxy board (a)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
b)
Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 (unit: mm)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.) b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.) Note 4: VDD = 16 V, Tch = 25C (Initiaal), L = 1.0 mH, RG = 25 , IAR = 5.0 A Note 5: Repetitive rating: pulse width limited by maximum channel temperature Note 6: on lower right of the marking indicates Pin 1. Weekly code: (Three digits)
Week of manufacture (01 for the first week of a year: sequential number up to 52 or 53) Year of manufacture (The last digit of a year)
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time |Yfs| Ciss Crss Coss tr ton tf VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 10 V, VDS = 0 V VDS = 20 V, VGS = 0 V ID = 10 mA, VGS = 0 V ID = 10 mA, VGS = -12 V VDS = 10 V, ID = 200 A VGS = 2.0 V, ID = 3.5 A VGS = 2.5 V, ID = 3.5 A VGS = 4 V, ID = 4 A VDS = 10 V, ID = 2.5 A Min 20 8 0.5 5 Typ. 60 40 30 10 760 110 130 7 Max 10 10 1.2 90 60 45 S pF pF pF m Unit A A V V
Turn-ON time Switching time Fall time
13
ns
13
Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge
toff
49
Qg Qgs Qgd VDD 16 V, VGS = 5 V, ID = 5 A

11 8 3

nC nC nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 5 A, VGS = 0 V Test Condition -- Min -- -- Typ. -- -- Max 20 -1.2 Unit A V
Forward voltage (diode)
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PD - Ta (W)
2
DEVICE MOUNTED ON A GLASS-EPOXY BOARD (a) (NOTE 2a) (1) SINGLE-DEVICE OPERATION (NOTE 3a) (2) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) DEVICE MOUNTED ON A GLASS-EPOXY BOARD (b) (NOTE 2b) (3) SINGLE-DEVICE OPERATION (NOTE 3a) (4) SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) t = 10 s
PD DRAIN POWER DISSIPATION
1.6
1.2 (1)
0.8 (3) 0.4 (2) (4) 0 0
40
80
120
160
200
AMBIENT TEMPERATURE
Ta
(C)
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SAFE OPERATING AREA
100 50 30 ID max (PULSE) * SINGLE-DEVICE VALUE AT DUAL OPERATION (NOTE 3b) 1 ms * 10 ms *
(A) DRAIN CURRENT ID
10 5 3 1 0.5 0.3 0.1 0.05 0.03
* SINGLE PULSE Ta = 25C Curves must be derated linearly with increase in temperature. 0.03 0.1 0.3 1
0.01 0.01
VDSS max 3 10 30 100
DRAIN-SOURCE VOLTAGE
VDS
(V)
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN GENERAL
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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